This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear explanation of theapproaches used and the links with modeling techniques for either higher or lower levels.
| ISBN-13: | 9789814583183 |
| ISBN-10: | 9814583189 |
| Publisher: | World Scientific Publishing Company Pte Limited |
| Publication date: | 2014 |
| Pages: | 195 |
| Product dimensions: | Height: 9.91 Inches, Length: 6.56 Inches, Weight: 1.31 Pounds, Width: 0.76 Inches |
| Author: | Benjamin Iniguez, Benjamin Iñiguez, Tor A. Fjeldly |
| Language: | en |
| Binding: | Hardcover |
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