Overview -- The transistor as a black box -- The MOSFET: a barrier-controlled device -- MOSFET IV: traditional approach -- MOSFET IV: the virtual source model -- Poisson equation and the depletion approximation -- Gate voltage and surface potential -- Mobile charge: bulk MOS -- Mobile charge: extremely thin SOI -- 2D MOS electrostatics -- The VS model revisited -- The Landauer approach to transport -- The ballistic MOSFET -- The ballistic injection velocity -- Connecting the ballistic and VS models -- Carrier scattering and transmission -- Transmission theory of the MOSFET -- Connecting the transmission and VS models -- VS characterization of transport in nanotransistors -- Limits and limitations
| ISBN-13: | 9789814571739 |
| ISBN-10: | 9814571733 |
| Publisher: | World Scientific Publishing Company Pte. Limited |
| Publication date: | 2018 |
| Pages: | 342 |
| Product dimensions: | Height: 9 Inches, Length: 6 Inches, Weight: 1.15 Pounds, Width: 0.88 Inches |
| Author: | Mark Lundstrom |
| Language: | en |
| Binding: | Paperback |